Electric field dependent switching and degradation of Resistance Random Access Memory

Author

Hosotani, Keiji ; Park, Seong-Geon ; Nishi, Yoshio

Author_Institution

on-leave from Toshiba Corp., Stanford, CA, USA

fYear

2009

fDate

18-22 Oct. 2009

Firstpage

11

Lastpage

14

Abstract

We have developed a novel method and model to describe the switching and degradation phenomena of uni-polar type ReRAM using conventional electric field dependent dielectric breakdown model. By this method, we can clearly describe the relationship between Â¿formingÂ¿, Â¿setÂ¿, Â¿resetÂ¿, and degradation process of TiO₂ based ReRAM. In this paper, we will demonstrate our method and discuss the switching and degradation model of uni-polar type ReRAM regarding its future potential for commercialization.

Keywords

electric breakdown; random-access storage; electric field dependent dielectric breakdown; electric field dependent switching; resistance random access memory degradation; unipolar type ReRAM; Degradation; Dielectric breakdown; Dielectric measurements; Electric resistance; Electrical resistance measurement; Random access memory; Read-write memory; Thermal stresses; Thickness measurement; Voltage; E-model; ReRAM; dielectric breakdown; reliability; uni-polar switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-3921-8

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2009.5383041

Filename

5383041