DocumentCode
3145412
Title
Wide center-tape balun for 60 GHz silicon RF ICs
Author
Meng, Fanyi ; Yeo, Kiat Seng ; Xu, Shanshan ; Ma, Kaixue ; Lim, Chee Chong
Author_Institution
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
fYear
2011
fDate
17-18 Nov. 2011
Firstpage
454
Lastpage
456
Abstract
A monolithic transformer balun has been designed for 60 GHz applications. The balun is implemented based on GLOBALFOUNDRIES 65 nm CMOS process. Simulated amplitude and phase imbalance less than 0.1 dB and 0.34 degrees respectively over the 55–66 GHz frequency band are achieved. Insertion loss is as low as 1.22 dB at 60 GHz. The designed device has advantage of small size, low loss and excellence in output balance.
Keywords
60 GHz; Passive Balun; RFIC design; mm-wave;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2011 International
Conference_Location
Jeju, Korea (South)
Print_ISBN
978-1-4577-0709-4
Electronic_ISBN
978-1-4577-0710-0
Type
conf
DOI
10.1109/ISOCC.2011.6138630
Filename
6138630
Link To Document