DocumentCode
3146264
Title
Characterization of semiconducting structures by the PWP method
Author
Holé, Stéphane ; Lewiner, Jacques
Author_Institution
Lab. Photons et Mater., Paris 6 Univ., Paris, France
fYear
2008
fDate
15-17 Sept. 2008
Abstract
The non-destructive electrical characterization of semiconducting structures mainly relies on indirect techniques. Charge information are then obtained by using an electrical model and only well modelled semiconductor materials can be accurately studied. The PWP method has already been shown to deliver measurable signals in the case of semiconducting structures. In this paper an analytical model of the signal is proposed and tested with Schottky and Metal/Insulator/Semiconductor (MIS) structures under various bias voltages.
Keywords
MIS structures; carrier mobility; PWP method; metal-insulator-semiconductor structures; mobile carriers; pressure wave propagation; semiconducting structures; Analytical models; Charge carrier processes; Electrodes; Electron mobility; Electrostriction; Permittivity; Schottky diodes; Semiconductivity; Semiconductor materials; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-1850-3
Electronic_ISBN
978-1-4244-1851-0
Type
conf
DOI
10.1109/ISE.2008.4813999
Filename
4813999
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