DocumentCode
3147000
Title
Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers
Author
Deshmukh, K.D. ; West, James E. ; Katz, H.E.
Author_Institution
Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD
fYear
2008
fDate
15-17 Sept. 2008
Abstract
Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of steps involved in the printing process and makes the process more energy efficient. In this article we show shifting of threshold voltage by charging with a Scanning Electron Microscope (SEM) electron source. Writing specific amounts of charge on the dielectric and a corresponding shift in threshold voltage is seen. The sample preparation will be discussed in detail elsewhere.
Keywords
amplifiers; logic circuits; organic field effect transistors; scanning electron microscopy; adaptable circuits; amplifiers; charged OFETS; flexible logic circuits; off current; organic field effect transistor; scanning electron microscope; threshold voltage tuning; Circuit optimization; Dielectrics; Electron sources; Energy efficiency; Logic circuits; OFETs; Printing; Scanning electron microscopy; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-1850-3
Electronic_ISBN
978-1-4244-1851-0
Type
conf
DOI
10.1109/ISE.2008.4814032
Filename
4814032
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