• DocumentCode
    3147000
  • Title

    Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers

  • Author

    Deshmukh, K.D. ; West, James E. ; Katz, H.E.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD
  • fYear
    2008
  • fDate
    15-17 Sept. 2008
  • Abstract
    Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of steps involved in the printing process and makes the process more energy efficient. In this article we show shifting of threshold voltage by charging with a Scanning Electron Microscope (SEM) electron source. Writing specific amounts of charge on the dielectric and a corresponding shift in threshold voltage is seen. The sample preparation will be discussed in detail elsewhere.
  • Keywords
    amplifiers; logic circuits; organic field effect transistors; scanning electron microscopy; adaptable circuits; amplifiers; charged OFETS; flexible logic circuits; off current; organic field effect transistor; scanning electron microscope; threshold voltage tuning; Circuit optimization; Dielectrics; Electron sources; Energy efficiency; Logic circuits; OFETs; Printing; Scanning electron microscopy; Threshold voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 2008. ISE-13. 13th International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-1850-3
  • Electronic_ISBN
    978-1-4244-1851-0
  • Type

    conf

  • DOI
    10.1109/ISE.2008.4814032
  • Filename
    4814032