Degradation of the charge transfer efficiency of a buried channel charge coupled device due to radiation damage by a beta source

Author

Robbins, M.S. ; Roy, T. ; Watts, S.J.

Author_Institution

Dept. of Phys., Brunel Univ., Uxbridge, UK

fYear

1991

fDate

9-12 Sep 1991

Firstpage

327

Lastpage

332

Abstract

The charge transfer efficiency of an EEV UT101 buried channel charge coupled device has been measured after irradiation by a ⁹⁰Sr beta source. The dependence on signal density and clock timing has been established. By the calculation of the energy level and capture cross section of the main electron trapping centre, and some annealing studies, the main radiation induced trapping complex has been found to be the Si-E centre. Some suggestions for the improvement of the degradation are made

Keywords

CCD image sensors; annealing; beta-ray effects; electron traps; CCD imager; EEV UT101; annealing studies; beta source; buried channel charge coupled device; capture cross section; charge transfer efficiency; clock timing; electron trapping centre; energy level; radiation damage; radiation induced trapping complex; signal density; Charge measurement; Charge transfer; Charge-coupled image sensors; Clocks; Current measurement; Degradation; Electron traps; Energy states; Strontium; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213581

Filename

213581