Characterization of radiation effects on trench-isolated bipolar analog microcircuit technology

Author

Raymond, James P. ; Gardner, Richard A. ; LaMar, George E.

Author_Institution

Mission Research Corp., San Diego, CA, USA

fYear

1991

fDate

9-12 Sep 1991

Firstpage

281

Lastpage

288

Abstract

Radiation effects on trench-isolated bipolar analog microcircuits have been characterized through measurement of neutron damage, long-term ionizing radiation damage, transient photoresponse and pulsed radiation-induced latchup. The characterization was done to provide basic information on the hardness of the technology for potential system applications. The principal means of evaluation was through characterization of process-control and custom test chips. Results of the test chip characterization were compared to radiation effects characterization of basic microcircuits of identical process technologies. The goal of the characterization was to determine if there were any surprises in the radiation susceptibility

Keywords

bipolar integrated circuits; integrated circuit testing; linear integrated circuits; neutron effects; radiation hardening (electronics); custom test chips; gain degradation; hardened microcircuit technology; long-term ionizing radiation damage; neutron damage; process control chips; pulsed radiation-induced latchup; radiation effects; radiation susceptibility; transient photoresponse; trench-isolated bipolar analog microcircuits; Dielectric substrates; Force measurement; Ionization; Ionizing radiation; Isolation technology; Neutrons; Pulse measurements; Radiation effects; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on

Conference_Location

La Grande-Motte

Print_ISBN

0-7803-0208-7

Type

conf

DOI

10.1109/RADECS.1991.213589

Filename

213589