DocumentCode
3153057
Title
Parameter extraction for the PSP MOSFET model by the combination of genetic and Levenberg-Marquardt algorithms
Author
Zhou, Q. ; Yao, W. ; Wu, W. ; Li, X. ; Zhu, Z. ; Gildenblat, Gennady
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fYear
2009
fDate
March 30 2009-April 2 2009
Firstpage
137
Lastpage
142
Abstract
Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.
Keywords
MOSFET; genetic algorithms; semiconductor device models; Levenberg-Marquardt algorithm; PSP MOSFET model; combined GA-LM algorithm; genetic algorithm; global parameter; local parameter; parameter extraction; size 65 nm; CMOS technology; Circuit simulation; Computational efficiency; Convergence; Equations; Genetics; MOSFET circuits; Parameter extraction; Semiconductor device modeling; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location
Oxnard, CA
Print_ISBN
978-1-4244-4259-1
Type
conf
DOI
10.1109/ICMTS.2009.4814627
Filename
4814627
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