DocumentCode
3153141
Title
Electrical Test Structures for Investigating the Effects of Optical Proximity Correction
Author
Tsiamis, A. ; Smith, S. ; McCallum, M. ; Hourd, A.C. ; Stevenson, J.T.M. ; Walton, A.J.
Author_Institution
Sch. of Eng., Univ. of Edinburgh, Edinburgh
fYear
2009
fDate
March 30 2009-April 2 2009
Firstpage
162
Lastpage
167
Abstract
Electrical test structures have been designed to enable the characterisation of corner serif forms of optical proximity correction. These structures measure the resistance of a conducting track with a right angled corner. Varying amounts of OPC have been applied to the outer and inner corners of the feature and the effect on the resistance of the track investigated. A prototype test mask has been fabricated which contains test structures suitable for on-mask electrical measurement. The same mask was used to print the structures using an i-line lithography tool for on-wafer characterisation. Results from the structures at wafer level have shown that OPC has an impact on the final printed features. In particular the level of corner rounding is dependent upon the dimensions of the OPC features employed and the measured resistance can be used to help quantify the level of aggressiveness of the inner corner serifs.
Keywords
masks; proximity effect (lithography); electrical test structures; i-line lithography; on-mask electrical measurement; on-wafer characterisation; optical proximity correction; prototype test mask; resistance measurement; Current measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Force measurement; Lithography; Metrology; Prototypes; Systems engineering and theory; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location
Oxnard, CA
Print_ISBN
978-1-4244-4259-1
Type
conf
DOI
10.1109/ICMTS.2009.4814632
Filename
4814632
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