Benefit of Direct Charge Measurement (DCM) on Interconnect Capacitance Measurement

Author

Miyake, Yasuhiro ; Goto, Masaharu

Author_Institution

Agilent Technol. Int. Japan Ltd., Hachioji

fYear

2009

fDate

March 30 2009-April 2 2009

Firstpage

211

Lastpage

215

Abstract

This paper discusses application of direct charge measurement (DCM) on characterizing on-chip interconnect capacitance. Measurement equipment and techniques are leveraged from Flat Panel Display testing. On-chip active device is not an essential necessity for DCM test structure and it is easy to implement parallel measurements. Femto-Farad measurement sensitivity is achieved without having on-chip active device. Measurement results of silicon and glass substrates, including parallel measurements, are presented.

Keywords

capacitance measurement; charge measurement; integrated circuit interconnections; direct charge measurement; femtoFarad measurement sensitivity; flat panel display testing; glass substrates; interconnect capacitance measurement; on-chip active device; on-chip interconnect capacitance; silicon substrates; Capacitance measurement; Capacitors; Charge measurement; Chromium; Current measurement; Integrated circuit interconnections; Integrated circuit measurements; Leakage current; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on

Conference_Location

Oxnard, CA

Print_ISBN

978-1-4244-4259-1

Type

conf

DOI

10.1109/ICMTS.2009.4814644

Filename

4814644