A 5 GHz Low Noise Amplifier with On-Chip Transformer-Balun

Author

EL-Gharniti, Ouail ; Kerherve, Eric ; Begueret, Jean-Baptiste

Author_Institution

Microelectron. IXL Lab., Univ. of Bordeaux, Talence

fYear

2006

fDate

10-12 Sept. 2006

Firstpage

353

Lastpage

356

Abstract

We present the design and implementation of a 5-6 GHz differential low noise amplifier (LNA) for WLAN applications. The LNA is fabricated in 0.25 mum SiGe BiCMOS process from STMicroelectronics. By using on-chip transformers a broadband impedance matching (3.5-11 GHz), conversion between single-end and differential signals and smaller chip size are achieved. The LNA exhibits a small signal gain of 14.25 dB and a noise figure of 4.1 dB. It draws 13.3 mA from 1.8 V power supply and exhibits and CP1 of -9 dBm. The chip size including pads is 0.68 mm²

Keywords

BiCMOS integrated circuits; UHF amplifiers; baluns; differential amplifiers; differential transformers; impedance matching; low noise amplifiers; wireless LAN; 1.8 V; 13.3 mA; 5 GHz; STMicroelectronics; SiGe; SiGe BiCMOS process; WLAN application; broadband impedance matching; differential LNA; low noise amplifier; on-chip transformer-balun; BiCMOS integrated circuits; Broadband amplifiers; Differential amplifiers; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Silicon germanium; Transformers; Wireless LAN; Broadband matching; differential amplifier; low noise amplifier (LNA); on-chip transformer; ultra wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology, 2006. The 9th European Conference on

Conference_Location

Manchester

Print_ISBN

2-9600551-5-2

Type

conf

DOI

10.1109/ECWT.2006.280510

Filename

4057513