RF performance analysis of single- and multi-wall carbon nanotube interconnect

Author

Das, Debaprasad ; Rahaman, Hafizur

Author_Institution

Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Shibpur, India

fYear

2011

fDate

16-18 Dec. 2011

Firstpage

1

Lastpage

6

Abstract

The work in this paper analyzes the applicability of carbon nanotube (CNT) as the interconnect for radio-frequency (RF) VLSI circuits. An RF model is developed by calculating the frequency dependent circuit parameters based on interconnect geometry. Using the developed model the RF performance of CNT based interconnects is investigated and compared to that of copper based interconnects for future technology nodes. It is shown that CNT based interconnect is capable of operating up to THz frequency range for shorter interconnect length.

Keywords

VLSI; carbon nanotubes; geometry; integrated circuit interconnections; radiofrequency integrated circuits; CNT; RF VLSI circuit; RF performance analysis; THz frequency range; copper based interconnection; frequency dependent circuit parameter calculation; interconnect geometry; multiwall carbon nanotube interconnection; radiofrequency VLSI circuit; shorter interconnect length; single-wall carbon nanotube interconnection; Analytical models; Carbon nanotubes; Copper; Integrated circuit interconnections; Integrated circuit modeling; Radio frequency; Very large scale integration; Carbon Nanotube (CNT); Multi-Wall CNT (MWCNT); Radio Frequency (RF); Single-wall CNT (SWCNT); Very Large Scale Integration (VLSI);

fLanguage

English

Publisher

ieee

Conference_Titel

India Conference (INDICON), 2011 Annual IEEE

Conference_Location

Hyderabad

Print_ISBN

978-1-4577-1110-7

Type

conf

DOI

10.1109/INDCON.2011.6139457

Filename

6139457