Control of Short-Channel Effects in GaN/AlGaN HFETs

Author

Uren, M.J. ; Hayes, D.G. ; Balmer, R.S. ; Wallis, D.J. ; Hilton, K.P. ; Maclean, J.O. ; Martin, T. ; Roff, C. ; McGovern, P. ; Benedikt, J. ; Tasker, P.J.

Author_Institution

QinetiQ Ltd., Malvern

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

65

Lastpage

68

Abstract

GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor doping; vapour phase epitaxial growth; GaN-AlGaN; HEMT; HFET; MOVPE growth; current slump; insufficient buffer doping; iron doping; power added efficiency; short-channel effects control; Aluminum gallium nitride; Doping; Epitaxial growth; Epitaxial layers; Gallium nitride; HEMTs; Iron; MODFETs; Power generation; Radio frequency; GaN; HEMT; RF power; current slump; power added efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282751

Filename

4057574