DocumentCode
3156204
Title
A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz
Author
Ui, Norihiko ; Sano, Seigo
Author_Institution
Eudyna Devices Inc., Yamanashi-ken
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
72
Lastpage
74
Abstract
A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology
Keywords
HEMT integrated circuits; III-V semiconductors; UHF power amplifiers; gallium compounds; wide band gap semiconductors; 100 W; 12 dB; 2 GHz; 2.14 GHz; 50 V; GaN; circuit topology; class-E HEMT; class-E operation; harmonics; high efficiency amplifier; high power amplifier; microwave frequency; Capacitors; Circuit testing; Current density; Gallium nitride; HEMTs; High power amplifiers; Microwave frequencies; Packaging; Voltage; Wireless communication; Class-E operation; GaN HEMT; harmonics; microwave frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282753
Filename
4057576
Link To Document