4-GHz Fully Monolithic SiGe HBT QVCO Using Superharmonic Coupling Topology

Author

Tseng, S.C. ; Meng, C.C. ; Chang, Y.-W. ; Huang, G.W.

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsin-Chu

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

161

Lastpage

164

Abstract

This paper demonstrates a 4-GHz monolithic SiGe heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (QVCO) using superharmonic coupling topology. The quadrature VCO at 4.17 GHz has phase noise of -116 dBc/Hz at 1MHz offset frequency, output power of -6 dBm and the figure of merit (FOM) -179 dBc/Hz. The core current consumption is 3.2 mA at 3V supply voltage. The die size is about 1.4 mm times 1.2 mm

Keywords

Ge-Si alloys; MMIC oscillators; bipolar integrated circuits; heterojunction bipolar transistors; voltage-controlled oscillators; 1.2 mm; 1.4 mm; 3 V; 3.2 mA; 4 GHz; 4.17 GHz; SiGe; heterojunction bipolar transistor; monolithic HBT QVCO; quadrature voltage controlled oscillator; superharmonic coupling; Circuits; Filters; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Phase transformers; Silicon germanium; Topology; Voltage-controlled oscillators; SiGe heterojunction bipolar transistor (HBT); phase noise; quadrature voltage controlled oscillator (QVCO); superharmonic coupling; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282776

Filename

4057599