Linear, Noise and Nonlinear HF Models for Advanced CMOS Technology

Author

Danneville, F. ; Pailloncy, G. ; Siligaris, A. ; Gloria, D. ; Dambrine, Gilles

Author_Institution

IEMN CNRS UMR, Villeneuve d´´ascq

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

209

Lastpage

212

Abstract

Deep CMOS technology requires more and more accurate and robust RF CMOS models (PSP, BSIM, EKV...) for circuit design, predictable down to millimetrique wave range. Because of their scalability, these models are the more convenient ones, their major drawback being the huge number of parameters to experimentally extract, which is costly and time consuming. Hence, whenever CMOS technology is under development, it looks interesting to investigate another approach. For this purpose, we propose in this work to show the usefulness of several in-house RF oriented models, fast to extract, to investigate the AC and noise properties of a 65 nm bulk CMOS technology. An extension is also proposed through the presentation of a large signal model, for which an application was carried out considering a 130 nm CMOS SOI technology

Keywords

CMOS integrated circuits; integrated circuit modelling; integrated circuit noise; silicon-on-insulator; 130 nm; 65 nm; CMOS SOI technology; CMOS technology; RF CMOS models; linear HF models; noise properties; nonlinear HF models; signal model; CMOS technology; Circuit synthesis; Hafnium; Integrated circuit modeling; Integrated circuit noise; Microelectronics; Radio frequency; Semiconductor device modeling; Temperature; Tin; 65 nm CMOS Technology; HF Linear and Nonlinear Modeling; HF Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282789

Filename

4057612