DocumentCode
3157118
Title
Selective emitter formation using optical thermal heating [of solar cells]
Author
Slaoui, Abdelilah ; Lachiq, Aziz ; Venture, L. ; Muller, Jean Claude
Author_Institution
Lab. PHASE, CNRS, Strasbourg, France
fYear
1996
fDate
13-17 May 1996
Firstpage
397
Lastpage
400
Abstract
Rapid thermal processing (RTP) using halogen tungsten lamps as a heating source has been successfully applied to the formation of solar cells in one thermal cycle. Here, the authors extend the use of RTP to form high/low doped regions using the properties of the emitting light. They have played with the absorption, reflection and transmittance of the light in order to control the impinging radiation onto the silicon samples. Selective emitters were prepared by these procedures. Sheet resistance variations in the range 20-150 Ω/□ were obtained depending on the processing parameters like lamp power, time and masking procedures
Keywords
elemental semiconductors; rapid thermal processing; semiconductor device testing; silicon; solar cells; Si; Si solar cells; absorption; halogen tungsten lamps; optical thermal heating; processing parameters; rapid thermal processing; reflection; selective emitter formation; sheet resistance; transmittance; Absorption; Lamps; Lighting control; Optical reflection; Photovoltaic cells; Rapid thermal processing; Silicon; Solar heating; Stimulated emission; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location
Washington, DC
ISSN
0160-8371
Print_ISBN
0-7803-3166-4
Type
conf
DOI
10.1109/PVSC.1996.564027
Filename
564027
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