• DocumentCode
    3157118
  • Title

    Selective emitter formation using optical thermal heating [of solar cells]

  • Author

    Slaoui, Abdelilah ; Lachiq, Aziz ; Venture, L. ; Muller, Jean Claude

  • Author_Institution
    Lab. PHASE, CNRS, Strasbourg, France
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    397
  • Lastpage
    400
  • Abstract
    Rapid thermal processing (RTP) using halogen tungsten lamps as a heating source has been successfully applied to the formation of solar cells in one thermal cycle. Here, the authors extend the use of RTP to form high/low doped regions using the properties of the emitting light. They have played with the absorption, reflection and transmittance of the light in order to control the impinging radiation onto the silicon samples. Selective emitters were prepared by these procedures. Sheet resistance variations in the range 20-150 Ω/□ were obtained depending on the processing parameters like lamp power, time and masking procedures
  • Keywords
    elemental semiconductors; rapid thermal processing; semiconductor device testing; silicon; solar cells; Si; Si solar cells; absorption; halogen tungsten lamps; optical thermal heating; processing parameters; rapid thermal processing; reflection; selective emitter formation; sheet resistance; transmittance; Absorption; Lamps; Lighting control; Optical reflection; Photovoltaic cells; Rapid thermal processing; Silicon; Solar heating; Stimulated emission; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564027
  • Filename
    564027