Monte Carlo Comparison Between InP-Based Double-Gate and Standard HEMTs

Author

Vasallo, B.G. ; Wichmann, N. ; Bollaert, S. ; Cappy, A. ; González, T. ; Pardo, D. ; Mateos, J.

Author_Institution

IEMN-DHS, UMR CNRS, Villeneuve d´´Ascq

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

304

Lastpage

307

Abstract

The intrinsic static and dynamic performance of InAlAs/InGaAs double-gate high electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2D Monte Carlo simulator. Our model allows going deeply into the physical behavior of this novel device in comparison with similar standard HEMTs. Different gate lengths are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The intrinsic cut-off frequency f_c of the DG-HEMTs is found to be similar to that of HEMTs, but the higher values of the figures of merit g_m/g_d and C_gs/C _gd lead to an improvement of f_max

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 2D Monte Carlo simulator; double-gate HEMT; high electron mobility transistors; standard HEMT; Attenuation; Cutoff frequency; Electrodes; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Microwave integrated circuits; Monte Carlo methods; Double-Gate; HEMTs; Monte Carlo simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282813

Filename

4057636