Preparation and characterization of manganese doped lead titanate films by sol-gel techniques

Author

Tandon, R.P. ; Raman, V. ; Singh, Ramadhar ; Narula, Amarjeet K.

Author_Institution

Nat. Phys. Lab., New Delhi, India

fYear

1991

fDate

33457

Firstpage

443

Lastpage

445

Abstract

In the present investigation, sol-gel method has been adopted to make manganese doped lead titanate (PT) films with perovskite structure by reacting liquid precursors to form a sol. The films were deposited on stainless steel substrate by multilayer spin coating using technique. The films were then annealed at temperatures close to 550°C. The films were crack free and the ferroelectric behavior was established by studying their hysteresis loop measurements. Dielectric constant was found to be around 300 and coercive field was greater than 60 kv/cm for films with finer grain sizes. The films fired at 550°C exhibited remanent polarization values close to 25 micro-coulomb/cm²

Keywords

dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric thin films; grain size; lead compounds; manganese; permittivity; sol-gel processing; 550 C; PbTiO₃:Mn; annealed; coercive field; crack free; dielectric constant; ferroelectric behavior; finer grain sizes; hysteresis loop; multilayer spin coating; perovskite structure; remanent polarization; sol-gel method; sol-gel techniques; stainless steel substrate; Annealing; Coatings; Dielectric substrates; Ferroelectric films; Ferroelectric materials; Manganese; Nonhomogeneous media; Steel; Temperature; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Conference_Location

University Park, PA

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522397

Filename

522397