• DocumentCode
    3157836
  • Title

    Design of a linear transconductor considering effects of weak inversion region and mobility degradation

  • Author

    Tongpoon, Pravit ; Miyazawa, Toshio ; Matsumoto, Fujihiko ; Nakamura, Shintaro ; Noguchi, Yasuaki

  • Author_Institution
    Dept. of Appl. Phys., Nat. Defense Acad., Yokosuka, Japan
  • fYear
    2009
  • fDate
    7-9 Jan. 2009
  • Firstpage
    280
  • Lastpage
    283
  • Abstract
    A local feedback transconductor is known as a linear transconductor. However, the linearity is deteriorated because of mobility degradation and operating in weak inversion region. In this paper, a new linear MOS transconductor based on a local feedback transconductor is proposed. The proposed circuit employs a square current source circuit and MOSFETs operating in triode region. Simulation results show that the proposed technique is effective for improvement of the linearity of the transconductor.
  • Keywords
    MOSFET; signal processing equipment; MOSFET; feedback transconductor; linear MOS transconductor; mobility degradation; square current source circuit; triode region; weak inversion region; Degradation; Transconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Intelligent Signal Processing and Communication Systems, 2009. ISPACS 2009. International Symposium on
  • Conference_Location
    Kanazawa
  • Print_ISBN
    978-1-4244-5015-2
  • Electronic_ISBN
    978-1-4244-5016-9
  • Type

    conf

  • DOI
    10.1109/ISPACS.2009.5383848
  • Filename
    5383848