DocumentCode
3157836
Title
Design of a linear transconductor considering effects of weak inversion region and mobility degradation
Author
Tongpoon, Pravit ; Miyazawa, Toshio ; Matsumoto, Fujihiko ; Nakamura, Shintaro ; Noguchi, Yasuaki
Author_Institution
Dept. of Appl. Phys., Nat. Defense Acad., Yokosuka, Japan
fYear
2009
fDate
7-9 Jan. 2009
Firstpage
280
Lastpage
283
Abstract
A local feedback transconductor is known as a linear transconductor. However, the linearity is deteriorated because of mobility degradation and operating in weak inversion region. In this paper, a new linear MOS transconductor based on a local feedback transconductor is proposed. The proposed circuit employs a square current source circuit and MOSFETs operating in triode region. Simulation results show that the proposed technique is effective for improvement of the linearity of the transconductor.
Keywords
MOSFET; signal processing equipment; MOSFET; feedback transconductor; linear MOS transconductor; mobility degradation; square current source circuit; triode region; weak inversion region; Degradation; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Signal Processing and Communication Systems, 2009. ISPACS 2009. International Symposium on
Conference_Location
Kanazawa
Print_ISBN
978-1-4244-5015-2
Electronic_ISBN
978-1-4244-5016-9
Type
conf
DOI
10.1109/ISPACS.2009.5383848
Filename
5383848
Link To Document