• DocumentCode
    3158039
  • Title

    Preparation of Bi4Ti3O12 thin films by reactive magnetron sputtering using metal target and their evaluations

  • Author

    Yamamoto, Takashi ; Matsuoka, Hiroyuki

  • Author_Institution
    Dept. of Electr. Eng., Nat. Defense Acad., Yokosuka, Japan
  • fYear
    1991
  • fDate
    33457
  • Firstpage
    485
  • Lastpage
    487
  • Abstract
    As sputtered ferroelectric and (001) oriented Bi4Ti3O12 thin films were prepared on a Pt/Ti/SiO2/Si substrate at a comparatively low temperature around 330 °C, by a reactive magnetron sputtering using Bi and Ti metal target. The chemical composition of deposited film is determined by the multi-element structure of target designed by a sputtering yield of Bi and Ti, which was changed by the gas ratio of the Ar+ and O2 and the value of input rf-power. Dielectric constant was 100 at 1 kHz. The remanent polarization and the coercive field were 7uC/cm2 and 51.2 kV/cm, respectively
  • Keywords
    bismuth compounds; dielectric polarisation; ferroelectric thin films; permittivity; sputter deposition; 1 kHz; 330 degC; Bi4Ti3O12; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrate; chemical composition; coercive field; dielectric constant; ferroelectric films; oriented films; reactive magnetron sputtering; remanent polarization; thin films; Argon; Bismuth; Chemicals; Dielectric constant; Ferroelectric materials; Polarization; Semiconductor thin films; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
  • Conference_Location
    University Park, PA
  • Print_ISBN
    0-7803-1847-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1994.522409
  • Filename
    522409
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3158039