• DocumentCode
    3158288
  • Title

    LF noise analysis of InP/GaAsSb/InP and InP/InGaAs/InP HBTs

  • Author

    Maneux, C. ; Grandchamp, B. ; Labat, N. ; Touboul, A. ; Riet, M. ; Godin, J. ; Bove, Ph

  • Author_Institution
    IXL, UMR CNRS, Talence
  • fYear
    2006
  • fDate
    10-13 Sept. 2006
  • Firstpage
    468
  • Lastpage
    471
  • Abstract
    This paper presents the first attempt to analyze low frequency noise of InP/GaAsSb/InP HBT compare with InP/InGaAs/InP HBT one. Extraction of the pre-eminent current noise source, SiB occurring at the emitter-base junction area is realized. The 1/f noise is considered as a technological figure-of-merit and Lorentzian shape noise is investigated
  • Keywords
    1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device noise; 1/f noise; HBT; InP-GaAsSb-InP; InP-InGaAs-InP; LF noise analysis; Lorentzian shape noise; low noise measurements; pre-eminent current noise source; technological figure-of-merit; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Noise shaping; InP HBT; Low noise measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Microwave Integrated Circuits Conference, 2006. The 1st
  • Conference_Location
    Manchester
  • Print_ISBN
    2-9600551-8-7
  • Type

    conf

  • DOI
    10.1109/EMICC.2006.282684
  • Filename
    4057678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3158288