Neutron induced defects and their effect on silicon detectors capacitance

Author

Darvas, R. ; Mudrik, M. ; Seidman, A. ; Croitoru, N.

Author_Institution

Dept. of Electr. Eng. & Phys. Electron., Tel-Aviv Univ., Ramat-Aviv, Israel

fYear

1991

fDate

5-7 Mar 1991

Firstpage

76

Lastpage

78

Abstract

Silicon radiation detectors are employed successfully in high energy physics experiments. In this work emphasis is put on detection, identification and characterization of deep energy levels caused by neutron irradiation. DLTS, C-T as well as C-f measurements were performed on silicon detectors (especially produced for the HI/HERA experiment in Hamburg), which were irradiated by 14.1 MeV neutrons with fluences on the range of 10¹⁰-10¹¹ n/cm². In addition a theoretical model, which describes the frequency and temperature dependencies of the capacitance, is presented

Keywords

capacitance; deep level transient spectroscopy; elemental semiconductors; neutron effects; radiation detection and measurement; semiconductor counters; silicon; 14.1 MeV; C-T measurements; C-f measurements; DLTS measurements; HI/HERA experiment; Si radiation detectors; deep energy levels; frequency dependence; high energy physics experiments; neutron irradiation; semiconductors; temperature dependence; theoretical model; Capacitance; Electron traps; Energy capture; Energy states; Frequency; Neutrons; Photonic band gap; Radiation detectors; Silicon radiation detectors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 1991. Proceedings., 17th Convention of

Conference_Location

Tel Aviv

Print_ISBN

0-87942-678-0

Type

conf

DOI

10.1109/EEIS.1991.217708

Filename

217708