Linearity Measurements of Si/SiGe:C Heterojunction Bipolar Transistor using a Large Signal Network Analyzer associated with an active Load-Pull Setup

Author

Blanchet, Floria ; El Yaagoubi, M. ; Barataud, Denis ; Nebus, Jean-Michel ; Pache, Denis ; Giry, Alexandre

Author_Institution

STMicroelectron., Crolles

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

259

Lastpage

262

Abstract

This paper presents original multi-harmonic modulated load-pull measurements on a Si/SiGe:C HBT of STMicroelectronics technology. The original aspect is that the linearity, power and efficiency measurements are realized on an active load-pull test-bench associated with a large signal network analyzer. The aim of the measurements is to optimize and characterize the HBT excited by a CW and a two-tone signal. The comparison with the simulation lets to validate the models in large-signal

Keywords

Ge-Si alloys; carbon; elemental semiconductors; heterojunction bipolar transistors; network analysers; power transistors; silicon; Si-SiGe:C; active load pull setup; heterojunction bipolar transistor; intermodulation; large signal network analyzer; linearity measurements; multi harmonic load-pull; power transistors; time domain characterization; two tone measurements; Frequency; Heterojunction bipolar transistors; Linearity; Mobile handsets; Power generation; Power measurement; Power transistors; Signal analysis; Testing; Time domain analysis; Active load-pull technique; intermodulation; large signal network analyzer; multi-harmonic load-pull; power transistors; time-domain characterization; two-tone measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281287

Filename

4057798