DocumentCode
316060
Title
The influence of the self-consistency on intraband optical transitions in semiconductor quantum dot
Author
Todorovic, G. ; Milanovic, V. ; Ikonic, Z. ; Indjin, D.
Author_Institution
Fac. of Civil Eng., Belgrade Univ., Serbia
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
145
Abstract
Within the envelope-function approximation a self-consistent procedure for calculating the energy structure, wave functions and charge distribution in spherically symmetric semiconductor quantum dots is presented, that takes account of both bound and free electron states. The Schrodinger and Poisson equation are solved iteratively while using the Morse-type parametrized potential to keep the charge neutrality in each iterative step. Numerical calculations performed for GaAs-Al0.3Ga0.7As based quantum dot indicate that the self-consistent potential very significantly modifies the free states wave functions and hence the bound-free transition matrix elements
Keywords
III-V semiconductors; Morse potential; Schrodinger equation; aluminium compounds; bound states; gallium arsenide; iterative methods; semiconductor quantum dots; wave functions; GaAs-Al0.3Ga0.7As; Morse potential; Poisson equation; Schrodinger equation; bound electron states; charge distribution; energy structure; envelope function approximation; free electron states; intraband optical transitions; iterative method; self-consistency; semiconductor quantum dot; spherical symmetry; transition matrix; wave function; Boundary conditions; Civil engineering; Effective mass; Gallium arsenide; Geometrical optics; Quantum dots; Quantum mechanics; Single electron devices; US Department of Transportation; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625201
Filename
625201
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