A proposed velocity-electric field relationship for modeling compound semiconductor devices

Author

Chakrabarti, P. ; Madheswaran, M.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

173

Abstract

This paper proposes a new empirical relationship between the electron mobility and the applied electric field for compound semiconductors over the entire region including the negative differential mobility region. It ensures continuity and smoothness of v-E curve over the entire region which helps the convergence behavior in numerical simulation of compound semiconductor devices. The proposed approximation is in good agreement with reported experimental results and Monte-Carlo simulation results

Keywords

Monte Carlo methods; electric fields; electron mobility; semiconductor device models; Monte-Carlo simulation; applied electric field; compound semiconductor device modelling; convergence behavior; electron mobility; negative differential mobility region; numerical simulation; v-E curve; velocity-electric field relationship; Analytical models; Boundary conditions; Circuit analysis; Circuit simulation; Differential equations; Gallium arsenide; Gunn devices; Predictive models; Semiconductor devices; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625208

Filename

625208