AlGaAs/GaAs heterojunction bipolar transistor reliability: Device modeling and SPICE simulation

Author

Liou, J.J. ; Sheu, S. ; Huang, C.I.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

Volume

1

fYear

1997

fDate

14-17 Sep 1997

Firstpage

223

Abstract

The physical mechanisms contributing to the reliability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) are investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test)

Keywords

III-V semiconductors; SPICE; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; semiconductor device models; semiconductor device reliability; semiconductor device testing; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor; SPICE circuit simulation; abnormal base current; burn-in test; device model; electrical stress; leakage current; reliability; thermal stress; Circuit simulation; Circuit testing; Doping; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Photonic band gap; SPICE; Stress; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1997. Proceedings., 1997 21st International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-3664-X

Type

conf

DOI

10.1109/ICMEL.1997.625223

Filename

625223