• DocumentCode
    316073
  • Title

    Investigation of MOSFET operation in bipolar mode

  • Author

    Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N. ; Abramov, V.V.

  • Author_Institution
    Eng. Phys. Inst., Acad. of Sci., Moscow, Russia
  • Volume
    1
  • fYear
    1997
  • fDate
    14-17 Sep 1997
  • Firstpage
    273
  • Abstract
    The authors are concerned with the properties of a conventional MOSFET in the bipolar mode of operation. They show that the base current can provide useful information about interface trap density at the Si-SiO2 interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits
  • Keywords
    MOSFET; electron traps; hole traps; interface states; semiconductor-insulator boundaries; surface recombination; MOSFET operation; Si-SiO2; Si-SiO2 interface; bipolar mode operation; interface trap density; Bipolar transistors; Doping; Logic design; Logic devices; MOSFET circuits; Microelectronics; Parameter extraction; Physics; Power MOSFET; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1997. Proceedings., 1997 21st International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-3664-X
  • Type

    conf

  • DOI
    10.1109/ICMEL.1997.625243
  • Filename
    625243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=316073