DocumentCode
316075
Title
On the extraction of the effective channel length of MOSFETs
Author
Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J. ; Sánchez, F. J García
Author_Institution
AT&T Bell Labs., Allentown, PA, USA
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
281
Abstract
The validity of the capacitance-based method for extracting the effective channel length of MOSFETs is investigated using results from a two-dimensional device simulator. It is found that the effective channel length obtained from the capacitance-based method is much smaller than those obtained from the current-voltage methods and that discrepancy results from inconsistencies imbedded in the development of the C-V method
Keywords
MOSFET; capacitance; semiconductor device models; 2D device simulator; C-V method; MOSFETs; capacitance-based method; effective channel length extraction; Capacitance measurement; Capacitance-voltage characteristics; Computer aided instruction; Current measurement; Density measurement; Electric variables; Electrical resistance measurement; Length measurement; MOSFETs; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625248
Filename
625248
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