DocumentCode
316077
Title
Method for series resistance extraction using the saturation region of MOSFETs
Author
Popescu, A.E. ; Rusu, A. ; Steriu, D. ; Chovet, A. ; Ionescu, A.M.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
289
Abstract
A new and simple extraction method for source series resistance and mobility reduction coefficient with the gate transverse field, based on the MOSFET transconductance modeling in the saturation region, is reported. The proposed procedure is validated on partially depleted SIMOX MOSFETs
Keywords
MOSFET; SIMOX; carrier mobility; electric resistance; equivalent circuits; semiconductor device models; MOSFETs; Si; gate transverse field; mobility reduction coefficient; partially depleted SIMOX devices; saturation region; series resistance extraction; source series resistance; transconductance modeling; Analytical models; Electrical resistance measurement; Linear predictive coding; MOSFET circuits; Parameter extraction; Semiconductor films; Substrates; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625251
Filename
625251
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