DocumentCode
316083
Title
Optimization of base doping profile for minimum transit time in bipolar transistors
Author
Rinaldi, P.G. ; Rinaldi, N.F.
Author_Institution
Dipt. di Ingegneria Elettronica, Naples Univ., Italy
Volume
1
fYear
1997
fDate
14-17 Sep 1997
Firstpage
339
Abstract
In this paper we present an analytical solution to the problem of finding the optimum base doping profile which minimises the transit time for fixed values of the doping concentration at the base edges. The optimum profile is described by simple expressions which show its dependence upon physical and technological parameters
Keywords
bipolar transistors; doping profiles; optimisation; base doping profile optimisation; base edges; bipolar transistors; doping concentration; minimum transit time; Annealing; Bipolar transistors; Calculus; Delay effects; Doping profiles; Epitaxial growth; Guidelines; Implants; Ion implantation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-3664-X
Type
conf
DOI
10.1109/ICMEL.1997.625267
Filename
625267
Link To Document