3D Embedding and Interconnection of Ultra Thin (≪ 20 μm) Silicon Dies

Author

Iker, F. ; Tezcan, D.S. ; Teixeira, R.C. ; Soussan, P. ; Moor, P. De ; Beyne, E. ; Baert, K.

Author_Institution

IMEC, Leuven

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

222

Lastpage

226

Abstract

This paper presents the process for the embedding of thin dies in a polymeric layer developed at IMEC. The different aspects of the fabrication process are described: the die thinning and singulation as well as the embedding itself including the redistribution of the thin die contacts. The embedding build-up is composed of photosensitive dielectric BCB and copper plated metal films. Thinning, singulation and embedding of 15 μm thick Si dies is shown and electrical connection to pads having a pitch of 60 μm is demonstrated.

Keywords

copper; dielectric materials; electroplating; elemental semiconductors; embedded systems; integrated circuit interconnections; polymers; semiconductor thin films; silicon; 3D thin dies embedding process; Cu; Si; copper plated metal films; die singulation; die thinning; fabrication process; photosensitive dielectric BCB; polymeric layer; size 15 mum; thin die contacts; ultra thin silicon die interconnection; Bonding; Contacts; Copper; Etching; Fabrication; Polymers; Power system interconnection; Silicon; Stacking; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2007. EPTC 2007. 9th

Conference_Location

Singapore

Print_ISBN

978-1-4244-1324-9

Electronic_ISBN

978-1-4244-1323-2

Type

conf

DOI

10.1109/EPTC.2007.4469735

Filename

4469735