• DocumentCode
    3163263
  • Title

    High power, commercial Silicon-FilmTM solar cells

  • Author

    Ford, David H. ; Barnett, Alien M. ; Hall, Robert B. ; Kendall, Christopher L. ; Rand, James A.

  • Author_Institution
    AstroPower Inc., Newark, DE, USA
  • fYear
    1996
  • fDate
    13-17 May 1996
  • Firstpage
    601
  • Lastpage
    604
  • Abstract
    Silicon-FilmTM wafers are cut from continuous sheets of solar cell quality silicon grown on low cost substrates. The original Silicon-FilmTM solar cells, the AP-225, were squares cut 15.4 cm on a side for an area of 236 cm2. The 15.4 cm dimension was the largest width that could be cut from the sheet while maintaining reasonable uniformity. Improvements in process control provided the opportunity to cut wafers that are 17.8 cm on a side for an area of 316 cm2. This larger area has led to a new solar cell, the AP-300, with a power of 3.5 W. This power is the highest available for any commercial polycrystalline silicon solar cell. Increased power, while maintaining the cost of handling a single unit, results in enhanced value in the final product. A unique gettering process that utilizes a front surface aluminum layer has been developed to enhance solar cell performance. Prior to the work presented here, this process had achieved a 2.82 W solar cell for an area of 239 cm2. Present process development and optimization efforts are concentrated on fine-tuning the silicon growth process and improving post-growth processing techniques. Post-growth improvement of minority carrier lifetime is accomplished through external gettering and bulk defect passivation techniques. This paper presents the solar cell process development that led to the demonstration of a 3.5 W large area AP-300 solar cell
  • Keywords
    carrier lifetime; elemental semiconductors; getters; minority carriers; passivation; semiconductor growth; silicon; solar cells; 17.8 cm; 3.5 W; AP-300 polycrystalline silicon solar cell; Silicon-FilmTM solar cells; bulk defect passivation; external gettering; fabrication process control; gettering process; minority carrier lifetime; performance; post-growth processing techniques; silicon growth; substrates; Aluminum; Charge carrier lifetime; Costs; Gettering; Laboratories; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Sawing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
  • Conference_Location
    Washington, DC
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3166-4
  • Type

    conf

  • DOI
    10.1109/PVSC.1996.564078
  • Filename
    564078