Electron energy deposition in photoresist: a local view

Author

Han, G. ; Khan, M. ; Fang, Y. ; Cerrina, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

34

Lastpage

35

Abstract

The authors examine electron scattering processes in resist materials using a direct Monte Carlo model, combined with a virtual quanta method. They separate the scattering events into four types: elastic, ionization, excitation, and plasmon events. The model is stochastic, in the sense that the electrons travel in free flight between the interactions. This code has the ability to simulate both electron and high energy photon lithographies.

Keywords

Monte Carlo methods; digital simulation; electron beam lithography; electron energy loss spectra; photolithography; photoresists; plasmons; resists; semiconductor process modelling; stochastic processes; direct Monte Carlo model; elastic events; electron energy deposition; electron lithography; electron scattering processes; excitation events; high energy photon lithography; ionization events; photoresist; plasmon events; resist materials; scattering events; simulation; stochastic model; virtual quanta method; Aerospace materials; Electromagnetic scattering; Electrons; Ionization; Lithography; Monte Carlo methods; Particle scattering; Plasmons; Resists; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178530

Filename

1178530