Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

Author

Mehrotra, Saumitra ; Paul, Abhijeet ; Luisier, Mathieu ; Klimeck, Gerhard

Author_Institution

Network for Comput. Nano Technol. & Birck Nano Technol. Center, Purdue Univ., West Lafayette, IN

fYear

2009

fDate

3-3 April 2009

Firstpage

1

Lastpage

4

Abstract

Impact of surface and transport, orientation on hole transport in p-type silicon nanowire MOSFET has been studied using atomistic 10-band sp3s*-SO tight-binding valence band model along with semi classical ballistic top-of-the-barrier approach for tri-gated devices. (100) and (110) surface orientations for <100> and <110> transport orientations were studied. Study of channel current and charge show that, due to heavy hole mass anisotropy, different confinement surfaces impact device performance differently.

Keywords

MOSFET; nanowires; silicon; atomistic tight-binding valence band model; semi classical ballistic top-of-the-barrier approach; surface orientations; transport orientations; tri-gated devices; trigated silicon nanowire pMOSFET; Anisotropic magnetoresistance; Atomic measurements; Computer networks; Intelligent networks; MOS devices; MOSFET circuits; Nanoscale devices; Nanotechnology; Orbital calculations; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

978-1-4244-3551-7

Electronic_ISBN

978-1-4244-3552-4

Type

conf

DOI

10.1109/WMED.2009.4816145

Filename

4816145