• DocumentCode
    3163965
  • Title

    Resistive Memory Sensing Using Delta-Sigma Modulation

  • Author

    Rapole, H. ; Rajagiri, A. ; Balasubramanian, M. ; Campbell, K.A. ; Baker, R.J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boise State Univ., Boise, ID
  • fYear
    2009
  • fDate
    3-3 April 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The design of four resistive memory sensing circuit topologies employing delta-sigma (DeltaSigma) modulation are presented. Operation of the designs and a comparison between simulations and experimentation is given. The designs were fabricated in a 500 nm CMOS process. Measured results indicate that the resistive values ranging from a chosen reference resistance to several hundred kOmega can be sensed reliably.
  • Keywords
    CMOS memory circuits; delta-sigma modulation; CMOS process; circuit topologies; delta-sigma modulation; resistive memory sensing; size 500 nm; Capacitors; Circuit simulation; Circuit topology; Delta modulation; Delta-sigma modulation; Electrical resistance measurement; Logic; Nonvolatile memory; Phase change random access memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2009. WMED 2009. IEEE Workshop on
  • Conference_Location
    Boise, ID
  • Print_ISBN
    978-1-4244-3551-7
  • Electronic_ISBN
    978-1-4244-3552-4
  • Type

    conf

  • DOI
    10.1109/WMED.2009.4816149
  • Filename
    4816149
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3163965