Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH/sub 4//H/sub 2//Ar and O/sub 2/

Author

Haneji, N. ; Segami, G. ; Suzuki, T. ; Arakawa, T. ; Tada, K. ; Shimogaki, Y. ; Nakano, Y.

Author_Institution

Graduate Sch. of Eng., Yokohama Nat. Univ., Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

70

Lastpage

71

Abstract

In this study, we introduced constant Ar flow to the cyclic etching in order to remove the alumina layer formed during ashing intervals by the Ar ion etching, and studied the etching conditions for various III-V semiconductor materials. It was demonstrated diat the combination of the cyclic etching with/without constant Ar flow and the continuous etching is useful for etching the device structure containing multi-semiconductor layers.

Keywords

III-V semiconductors; sputter etching; Al/sub 2/O/sub 3/; Ar; III-V semiconductor; alumina layer; ashing process; constant Ar flow; cyclic etching; cyclic injection; electron cyclotron resonance-reactive ion etching; multilayer structure; Argon; Artificial intelligence; Cyclotrons; Electrons; Etching; III-V semiconductor materials; Indium compounds; Indium phosphide; Resonance; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178548

Filename

1178548