The tunable bandgap of AB-stacking bilayer graphene under the applied electric fields for power devices

Author

Yan, Liu ; Wang, Wenbo ; Wan, Tao ; Guo, Qing ; Sheng, Kuang ; Yu, Bin

Author_Institution

Second Affiliated Hosp. Zhejiang Univ. Coll. of Med., Zhejiang Univ., Hangzhou, China

fYear

2011

fDate

8-10 Aug. 2011

Firstpage

6040

Lastpage

6043

Abstract

AB-stacked bilayer graphene sheet (BLG) under the electric field is investigated by ab initio calculation in the paper. The interlayer distance between the two layers, band structures, density of sates, and atomic charges of the system are investigated in the presence of different electric fields normal to the BLG. AB-stacked BLG is able to tune the bandgap into 0.234eV while the external electronic field is 1V/nm, Under great electric field, the AB-stacked graphene is still stable and its bandgap is tuned to around 0.45eV. It shows the potential usage of graphene-based devices for power devices.

Keywords

ab initio calculations; band structure; electric fields; electronic density of states; energy gap; graphene; stacking; AB-stacking bilayer graphene sheet; C; SiO₂; ab initio calculation; applied electric fields; atomic charges; band structure; density of states; electronic field; graphene-based device; power devices; tunable bandgap; Atomic layer deposition; Carbon; Diamond-like carbon; Doping; Electric fields; Photonic band gap; Substrates; electrical field; graphene; power devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 2011 2nd International Conference on

Conference_Location

Deng Leng

Print_ISBN

978-1-4577-0535-9

Type

conf

DOI

10.1109/AIMSEC.2011.6010143

Filename

6010143