DocumentCode
3165573
Title
Growth of a sub-micron single diamond particle on a Si tip and its field emission characteristic
Author
Mimura, H. ; Yuan, G. ; Ikeda, Makoto ; Yokoo, K.
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
202
Lastpage
203
Abstract
Diamond has been receiving a great deal of attention as a high electron emission material due to an expectation of a negative electron affinity or a low work function. However, the emission mechanism from the diamond is still unclear. To identify the emission sites, we grew a sub-micron single diamond particle on the top of a single Si tip.
Keywords
chemical vapour deposition; diamond; electron affinity; electron field emission; elemental semiconductors; semiconductor growth; silicon; work function; C; Si; Si tip; emission sites; field emission characteristic; high electron emission material; low work function; negative electron affinity; polycrystalline films; sub-micron single diamond particle; Crystallization; Electron emission; Etching; Fluid flow; Frequency; Grain boundaries; Hydrogen; Insulation; Lattices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178614
Filename
1178614
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