Power Amplifier Design Strategy to null IMD asymmetry

Author

Colantonio, Paolo ; Giannini, Franco ; Giofre, Rocco ; Limiti, Emesto ; Nanni, Antonio

Author_Institution

Dept. of Electron. Eng., Universita di Roma Tor Vergata

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1304

Lastpage

1307

Abstract

In this contribution the minimisation of the asymmetry between lower and upper sideband intermodulation products is discussed, using a Volterra series approach. From the inferred relationships new conditions to minimise IMD asymmetry are obtained and verified through the design of a C-band 2nd harmonic tuned hybrid power amplifier using a GaN PHEMT device. The proposed approach, without linearization schemes, achieves the minimisation of AM-PM conversion and asymmetry up to 400 MHz tone spacing, with a minimum 32.5 dBm output power and over 60 % drain efficiency @ 5.5 GHz

Keywords

HEMT circuits; III-V semiconductors; Volterra series; gallium compounds; intermodulation distortion; microwave power amplifiers; wide band gap semiconductors; 5.5 GHz; AM-PM conversion; C-band 2nd harmonic tuned hybrid power amplifier; GaN; IMD asymmetry; PHEMT device; Volterra series; intermodulation distortion; sideband intermodulation products; Equivalent circuits; Frequency; Gallium nitride; Harmonic analysis; Linearity; Microwave amplifiers; Minimization; Power amplifiers; Power generation; Power system harmonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281236

Filename

4058070