• DocumentCode
    3166816
  • Title

    Session #2 Planar SOI device

  • Author

    Doris, Bruce ; Fung, Samuel

  • Author_Institution
    IBM, USA
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    13
  • Lastpage
    14
  • Keywords
    CMOS process; CMOS technology; MOSFET circuits; Manufacturing processes; Parasitic capacitance; Power MOSFET; Research and development; Semiconductor device manufacture; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656271
  • Filename
    4656271
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3166816