• DocumentCode
    3167458
  • Title

    High resistivity SOI CMOS technology for multi-standard RF frontends

  • Author

    Gianesello, F. ; Gloria, D. ; Boret, S. ; Bon, O. ; Touret, P. ; Pastore, C. ; Rauber, B. ; Raynaud, C.

  • Author_Institution
    TR&D, STMicroelectron., Crolles
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    SOI technology is now emerging as a promising one for the integration of RF front-end modules, mainly for antenna switches and power amplifiers (PAs). This paper reviews the performances of STMicroelectronics 0.13 mum High Resistivity (HR) SOI CMOS technology and discusses the potentiallity for SOI technology to capture RF front-end business in the near future.
  • Keywords
    CMOS integrated circuits; antenna accessories; power amplifiers; silicon-on-insulator; STMicroelectronics; antenna switches; high resistivity SOI CMOS technology; multistandard RF frontends; power amplifiers; size 0.13 mum; CMOS technology; Conductivity; Costs; Inductors; Integrated circuit technology; Radio frequency; Silicon; Switches; Transceivers; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656302
  • Filename
    4656302
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167458