Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD

Author

Keller, S. ; Keller, B.P. ; Wu, Y.F. ; Kapolnek, D. ; Masui, H. ; Kato, M. ; Imagi, S. ; Mishra, U.K. ; DenBaars, S.P.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

56

Lastpage

63

Abstract

We have achieved high quality InGaN epitaxial layers by atmospheric pressure MOCVD on c-plane sapphire. The indium segregation coefficient is shown to depend not only on the growth temperature, but also on the growth rate of the InGaN film. Strong band edge photoluminescence was observed for InGaN films grown at temperatures as low as 700°C with In mole fractions up to 0.20. Preliminary results are presented on blue InGaN/GaN double heterostructure LEDs

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; p-n heterojunctions; segregation; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 700 degC; InGaN-GaN; atmospheric pressure MOCVD; band edge photoluminescence; blue LEDs; c-plane sapphire; double heterostructure LEDs; epitaxial layers; growth rate; growth temperature; mole fractions; segregation coefficient; Annealing; Doping; Epitaxial growth; Gallium nitride; Laser excitation; Light emitting diodes; MOCVD; Photoluminescence; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482420

Filename

482420