One-flux analysis of current blocking in double heterostructure bipolar transistors with composite collectors

Author

McKinnon, W.R. ; McAlister, S.P. ; Abid, Z. ; Guzzo, E.E.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

1995

fDate

7-9 Aug 1995

Firstpage

113

Lastpage

122

Abstract

We use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; CC-DHBTs; InP-InGaAs-InP; composite collectors; current blocking; double heterostructure bipolar transistors; drift-diffusion simulation; electron accumulation; one-flux analysis; spacer layer; Bipolar transistors; Chemical vapor deposition; Double heterojunction bipolar transistors; Electrons; Energy barrier; Indium gallium arsenide; Indium phosphide; Knee; Photonic band gap; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482426

Filename

482426