PCS Power Amplifier Module Package Using Selectively Anodized Aluminum Substrate

Author

Shin, Seong-Ho ; Lee, Ju-Hyang ; Sohn, Bo-In ; Ryu, Seung-Han ; Kwon, Young-Se

Author_Institution

Dept. of Electron. Eng. & Comput. Sci., KAIST, Daejeon

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1767

Lastpage

1770

Abstract

In this paper, we present a power amplifier module package using a selectively anodized aluminum substrate for mobile handsets operating in the 1850 MHz to 1910 MHz PCS band. High-Q passive components (inductors, capacitors, transmission lines) for implementing the power amplifier are integrated on a 60 mum thick anodized aluminum layer and a bare InGaP HBT MMIC die is mounted on aluminum with the ability of effective heat dissipation. The fabricated module has a compact 3mm times 3mm size and exhibits 28.4 dB power gain, 41.5 % power added efficiency (PAE) and -36 dBc adjacent channel power ratio (ACPR) under a supply voltage of 3.7 V

Keywords

III-V semiconductors; UHF power amplifiers; aluminium; bipolar MMIC; gallium compounds; indium compounds; mobile handsets; modules; substrates; 1.85 to 1.91 GHz; 28.4 dB; 3 mm; 3.7 V; 41.5 percent; 60 micron; HBT MMIC; InGaP; PCS power amplifier module package; effective heat dissipation; high-Q passive components; mobile handsets; selectively anodized substrate; Aluminum; Capacitors; Heterojunction bipolar transistors; High power amplifiers; Inductors; Mobile handsets; Packaging; Personal communication networks; Power amplifiers; Power transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281485

Filename

4058194