Pyrotransistor-GaAs FET with a "pyroelectric wafer" gate

Author

Poplavko, Y.M. ; Moskalyuk, V.A. ; Timofeyev, A.I. ; Prokopenko, Y.V.

Author_Institution

Kiev Polytech. Inst., Ukraine

fYear

1991

fDate

33457

Firstpage

698

Lastpage

700

Abstract

The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; infrared detectors; photodetectors; pyroelectric detectors; GaAs; GaAs FET; MESFET technology; artificial pyroelectricity; multifunction properties; one-crystal pyroelectric sensors; pyroelectric wafer gate; pyrotransistor; semiconductor; thermal-to-electric transducer; uncooled far infrared detector; voltage sensitivity; Ceramics; Crystals; FETs; Gallium arsenide; III-V semiconductor materials; Infrared detectors; Microelectronics; Pyroelectricity; Transducers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on

Print_ISBN

0-7803-1847-1

Type

conf

DOI

10.1109/ISAF.1994.522464

Filename

522464