DocumentCode
317071
Title
Triangular ring laser in InP/InGaAsP
Author
Ji, C. ; Leary, M.H. ; Ballantyne, J.M.
Author_Institution
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
7
Abstract
A fabricated InP-InGaAsP triangular ring laser is shown. Light is coupled out through the facet at bottom. The two nearly total internal reflection (TIR) mirrors, the structural angle, and the output angle, are also defined. Triangular ring lasers of various cavity lengths and corresponding Fabry-Perots were fabricated on the same chip
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; optical couplers; optical fabrication; ring lasers; semiconductor lasers; Fabry-Perots; InP-InGaAsP; InP-lnGaAsP; cavity lengths; laser facet; optical fabrication; output angle; semiconductor lasers; structural angle; total internal reflection laser mirrors; triangular ring laser; Etching; Fabry-Perot; Indium phosphide; Laser modes; Laser noise; Power generation; Power lasers; Ring lasers; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630490
Filename
630490
Link To Document