Monte Carlo modeling of nanometer scale MOSFETs

Author

Sangiorgi, Enrico ; Palestri, Pierpaolo ; Esseni, David ; Fiegna, Claudio ; Selmi, Luca

Author_Institution

Univ. of Bologna, Cesena

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

68

Lastpage

73

Abstract

Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; Monte Carlo modeling; multisubband approach; nanometer scale MOSFET; quantum corrections; quantum-mechanical effects; quasiballistic transport; semiclassical carrier transport; Acoustic scattering; Discrete event simulation; Equations; Helium; MOSFETs; Monte Carlo methods; Optical scattering; Particle scattering; Quantization; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472456

Filename

4472456