• DocumentCode
    3171375
  • Title

    Novel devices in ESD protection

  • Author

    Gossner, H. ; Schneider, J.

  • Author_Institution
    Infineon Technol., Munich
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    80
  • Lastpage
    85
  • Abstract
    ESD protection circuits are part of any electronic circuit to ensure robustness against electrical surges. The choice of the ESD protection concept strongly depends on the IO devices. The integration of devices like DeMOS for high voltage interfaces in system on chip applications and multigate FETs in advanced CMOS requires new process optimization strategies taking into account the high current behavior of these devices. The specific thermal behavior of fin structures and the base push out in DeMOS devices during an ESD event are found to be detrimental. However, by the presented process and design modifications the initially very low ESD robustness of < 0.1 mA/mum can be raised to levels which are compliant with IC design constraints.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; field effect transistors; CMOS; DeMOS devices; ESD protection circuits; IC design; electronic circuit; multigate FET; CMOS technology; Current density; Electrostatic discharge; FETs; Protection; Robustness; Silicon; System-on-a-chip; Temperature distribution; Voltage; DeMOS; ESD; FINFET; MugFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472458
  • Filename
    4472458