• DocumentCode
    3171645
  • Title

    Parameter extraction for PSP MOSFET model using particle swarm optimization

  • Author

    Thakker, R.A. ; Gandhi, Nikunj ; Patil, M.B. ; Anil, K.G.

  • Author_Institution
    Indian Inst. of Sci. Mumbai, Mumbai
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    130
  • Lastpage
    133
  • Abstract
    This paper demonstrates the application of particle swarm optimization (PSO) for parameter extraction of MOSFET model for the first time. Parameters are extracted for PSP MOS model for 65 nm technology NMOS devices. It has been shown that the performance of the PSO algorithm is better than the genetic algorithm (GA) in terms of accuracy and consistency.
  • Keywords
    MOSFET; particle swarm optimisation; NMOS devices; PSP MOSFET model; parameter extraction; particle swarm optimization; Algorithm design and analysis; Circuit testing; Evolutionary computation; Genetic algorithms; MOS devices; MOSFET circuits; Parameter extraction; Particle swarm optimization; Partitioning algorithms; Space exploration; MOSFET parameter extraction; Particle swarm optimization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472470
  • Filename
    4472470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3171645