DocumentCode
3171752
Title
Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
Author
Huang, Sheng-Yi ; Chen, Kun-Ming ; Huang, Guo-Wei ; Yang, Dao-Yen ; Chang, Chun-Yen
Author_Institution
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu
fYear
2006
fDate
18-20 Jan. 2006
Abstract
Effects of hot carrier stress (HCS) and oxide breakdown (OBD) on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that under the same dc degradation, the cut-off frequency (fT ) and maximum oscillation frequency (fmax) suffered more seriously by OBD than by HCS. Minimum noise figure (NFmin) is one of the main concerns in RF characteristics. NF min increased dramatically after OBD than that after HCS due to the added gate leakage paths. Those effects can be clarified and explained by using a constructed small-signal model
Keywords
MOSFET; hot carriers; microwave transistors; semiconductor device breakdown; semiconductor device models; RF MOSFET; cut-off frequency; hot carrier stress; maximum oscillation frequency; oxide breakdown; small signal model; Cutoff frequency; Degradation; Electric breakdown; Gate leakage; Hot carriers; MOSFETs; Noise figure; Noise measurement; Radio frequency; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587912
Filename
1587912
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